We are researching a way to fully exploit the potential of silicon to its maximum through the use of carrier selective junctions. This will allow the extraction of light generated charge carriers without recombination. Such contacts allow simple device architecture – non patterned double-side contacted solar cells, which can be fabricated by upgrading existing production lines.
A unique consortium of experienced industrial actors will collaborate with a set of world-leading institutes to target efficiencies >25.5% on large area cell and >22% at module level while demonstrating pilot manufacturing readiness at competitive costs.
The DISC device architecture enables reduction of non-abundant material consumption, enhancement of the energy yield, and a modern module design ensuring outstanding durability. In such a way DISC will provide the key elements for achieving very low levelized costs of electricity in Europe with potential for further reduction, making solar one of the cheapest electricity sources.
The DISC project together with the NextBase and Ampere projects are presenting the main results of the three projects in a High Efficiency Approaches in Crystalline Silicon PV Workshop today in Le Bourget du Lac in France.
The M36 STC Meeting was held at CEA-INES in Chambery, France. Several highlights were achieved.