Sep 1 2017

M12 meeting

STC meeting after 12 months since the project’s start took place at ISFH in Hameln on Aug 30-31 2017. The project is in full swing in and is focused to reach the anticipated goals. The most important highlights from last 6 months are:

  • Demonstration of recombination current densities around 5 fA/cm2 for electron- and hole-selective contacts on textured and planar surfaces, respectively. Application on the full area p-type c-Si solar cells results in efficiency above 22%.
  • Further development of both high-performance In-based TCOs and low-cost Zn-based. Studies on several TCO/CSJ contacts showing low contact resistance (< 0.1 Ω cm2).
  • Development of Cu plating approach with excellent contacting properties (rc < 0.16 mΩ∙cm2; fingers: σ > 3.7∙107 S/m, w < 30 µm, h > 15 µm) maintain VOC > 730 mV leading to 83% FF on front and rear plated 6” CZ-Si precursors with TCO.
  • Verification of transparency dependence on deposition temperatures of poly-Si.
    Development of 3D simulation model for TLM measurement with complex structure geometry.
    Structural investigation of the impact of annealing step on TCO stacks.

Initial results were already presented at the SiliconPV 2017 conference with three scientific contributions.

During the fruitful and constructive M12 meeting, the consortium members also proved team spirit in other disciplines. We successfully rowed the Weser river!

Mar 30 2017

M6 meeting

An official project meeting after 6 months of the project was held in Lyon, France. The event was attended by over 25 representatives of all 13 consortium partners. Recent project developments were discussed. Work package leaders presented the work done within the work packages. All work packages were reported to be on track with already encouraging preliminary results.

Highlights:

  • Development of electron-and hole-selective junctions for textured surfaces, attaining recombination current densities below 5 fA/cm2 and 30 fA/cm2, respectively.
  • Low-damage deposition (ALD) of In-based TCO layers with high mobility (70 cm2/V/s) and ALD of low-cost Zn-based TCO layers.
  • In-free SmartWire interconnection.
  • Quantification of free carrier absorption losses by experiment and simulation.
    I-V characteristics at deep temperatures of solar cells featuring polysilicon-based passivating contacts
    Optical simulation study of the impact of different O2 amount during ITO deposition
  • Design of project identity set and launch of public DISC website.
Oct 4 2016

Kick-off meeting

A DISC project kick-off meeting has been held on Oct 4 2016 in Brussels. The entire project consortium led by the coordinator, Institut für Solarenergieforschung Hameln (ISFH), supported by a project management specialist, Ayming, and The European Commission represented by the Innovation and Networks Executive Agency (INEA) have officially launched the DISC project as of Oct 1 2016.

Read the public announcement here.