Josua Stuckelberger, Gizem Nogay, Philippe Wyss, Andrea Ingenito, Christophe Allebe, Jorg Horzel, Brett A. Kamino, Matthieu Despeisse, Franz-Josef Haug, Philipp Loper, Christophe Ballif;
Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells;
IEEE Journal of Photovoltaics, 2018; doi: 10.1109/JPHOTOV.2017.2779871
Frank Feldmann, Gizem Nogay, Philipp Löper, David L.Young, Benjamin G. Lee, Paul Stradins, Martin Hermle, Stefan W.Glunz;
Charge carrier transport mechanisms of passivating contacts studied by temperature-dependent J-V measurements;
Solar Energy Materials and Solar Cells, 2018; doi: 10.1016/j.solmat.2018.01.008
Massimo Nicolai, Mauro Zanuccoli, Frank Feldmann, Martin Hermle, Claudio Fiegna;
Analysis of Silicon Solar Cells With Poly-Si/SiOx Carrier-Selective Base and Emitter Contacts;
IEEE Journal of Photovoltaics, 2018; doi: 10.1109/JPHOTOV.2017.2775142
Stephanie Essig, Julie Dréon, Esteban Rucavado, Mathias Mews, Takashi Koida, Mathieu Boccard, Jérémie Werner, Jonas Geissbühler, Philipp Löper, Monica Morales-Masis, Lars Korte, Stefaan De Wolf, Christophe Balllif;
Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics;
Solar RRL, 2018; doi: 10.1002/solr.201700227
Frank Feldmann, Gizem Nogay, Jana-Isabelle Polzin, Bernd Steinhauser, Armin Richter, Andreas Fell, Christian Schmiga, Martin Hermle, and Stefan W. Glunz;
A Study on the Charge Carrier Transport of Passivating Contacts;
IEEE Journal of Photovoltaics, 2018; doi: 10.1109/JPHOTOV.2018.2870735
N. Folchert, M. Rienäcker, A.A. Yeo, B. Min, R. Peibst, R. Brendel;
Temperature-dependent contact resistance of carrier selective Poly-Si on oxide junctions;
Solar Energy Materials and Solar Cells, 2018; doi: 10.1016/j.solmat.2018.05.046
Christoph Messmer, Martin Bivour, Jonas Schön, and Martin Hermle;
Requirements for efficient hole extraction in transition metal oxide-based silicon heterojunction solar cells;
Journal of Applied Physics, 2018; doi: 10.1063/1.5045250
Christoph Messmer, Martin Bivour, Jonas Schön, Stefan W. Glunz, and Martin Hermle;
Numerical Simulation of Silicon Heterojunction Solar Cells Featuring Metal Oxides as Carrier-Selective Contacts;
IEEE Journal of Photovoltaics, 2018; doi: 10.1109/JPHOTOV.2018.2793762
Tobias F. Wietler, Byungsul Min, Sina Reiter, Yevgeniya Larionova, Rolf Reineke-Koch, Frank Heinemeyer, Rolf Brendel, Armin Feldhoff, Jan Krugener, Dominic Tetzlaff, Robby Peibst;
High Temperature Annealing of ZnO:Al on Passivating POLO Junctions: Impact on Transparency, Conductivity, Junction Passivation, and Interface Stability;
IEEE Journal of Photovoltaics, 2019; doi: 10.1109/JPHOTOV.2018.2878337
Andrea Ingenito, Gizem Nogay, Josua Stuckelberger, Philippe Wyss, Luca Gnocchi, Christophe Allebe, Jorg Horzel, Matthieu Despeisse, Franz-Josef Haug, Philipp Löper, Christophe Ballif;
Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells;
IEEE Journal of Photovoltaics, 2019; doi: 10.1109/JPHOTOV.2018.2886234
G. Nogay , F. Sahli, J. Werner , R. Monnard, M Boccard, M. Despeisse, F-J. Haug, Q. Jeangros , A. Ingenito, C. Ballif;
25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts;
ACS Energy Lett., 2019; doi: 10.1021/acsenergylett.9b00377
Leonard Tutsch, Frank Feldmann, Jana Polzin, Christoph Luderer, Martin Bivour, Anamaria Moldovan, Jochen Rentsch, Martin Hermle;
Implementing transparent conducting oxides by DC sputtering on ultrathin SiOx / poly-Si passivating contacts;
Solar Energy Materials and Solar Cells, 2019; doi: 10.1016/j.solmat.2019.109960
F.-J. Haug, A. Ingenito, F. Meyer, S. Libraro, N. Bolis, J.J. Diaz Leon, C. Allebé, C. Ballif;
Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells;
IEEE Journal of Photovoltaics, 2019; doi: 10.1109/JPHOTOV.2019.2939880, EPFL Infoscience, zenodo (data set)
Andrej Čampa, Franc Smole, Nils Folchert, Tobias Wietler, Byungsul Min, Rolf Brendel and Marko Topič;
Detailed analysis and understanding of the transport mechanism of poly-Si based carrier selective junctions;
IEEE Journal of Photovoltaics, 2019; doi: 10.1109/JPHOTOV.2019.2943610
Conferences
EU PVSEC 2019 (Sep 9-13 2019)
J.J. Diaz Leon et al.; Integration Avenues in Solar Cells Implementing Passivating Contacts (2BO.2.4, Tue 14:15, Audit 2)
S. Bordihn et al.; Modelling of Passivation and Conductivity of n-Type Poly-Si Layers Adapting Machine Learning (2BO.3.1, Tue 15:15, Audit 1)
A. Veau et al.; Polysilicon Layers Doped by Plasma Immersion Ion Implantation (PIII): New Paths for Industrial Processing of Passivated Contacts Solar Cells (2BO.3.3, Tue 15:45, Audit 1)
E. Bruhat et al.; Fired Hydrogenated AZO Layers: A New Passivation Approach for High Temperature Passivated Contact Solar Cells (2CO.9.1, Wed 8.30, Autid 4)
C. Poulopoulos et al.; Environmental and Social Impact Assessment of High-Efficient Double Side Contacted Cells with Innovative Carrier Selective Contacts (4.AV.2.56, Mon 17:00, Poster Area)
M. Winter et al.; Degradation and Regeneration of n+-Poly-Si on Oxide Surface Passivation under Illumination and Dark Annealing on p-Type Cz-Si (2CV.2.4, Wed 12:45, Poster Area)
J. Jourdan et al.; Development of Phosphorus Thin Doped Layers by Plasma Immersion for Homo- Hetero Junction Solar Cells Application (2DV.1.56, Thu 12:45, Poster Area)
IEEE PVSC 2019 (Jun 24-29 2019)
C. Allebé et al.; PECVD-based layers for improved high temperature industrial solar cell processes
E. Bruhat et al.; Contacting n+ Poly-Si Junctions with Fired AZO Layers: A Promising Approach for High Temperature Passivated Contact Solar Cells
ETIP PV - Readying for the TW era (May 28 2018)
M. Bokalič et al.; A Route to High Efficiency PV – The DISC Project
T. Hatt, J. Bartsch, Y. Franzl, S. Kluska, and M. Glatthaar;
Advances with resist-free copper plating approaches for the metallization of silicon heterojunction solar cells, 10.1063/1.5125875
SiliconPV 2019 (Apr 8-10 2019)
T. Hatt et al.; Establishment of the Native Oxide Barrier Layer for Selective Electroplated Metallization for Bifacial Silicon Heterojunction Solar Cells; Mon, April 08; 17:00-18:30 – Session 4, 10.1063/1.5123832
E. Bruhat et al.;TCO contacts on poly-Si layers: High and Low Temperature Approaches to Maintain Passivation and Contact Properties; Wed, April 10; 13:45-15:00 – Session 10, 10.1063/1.5123828
L. Tutsch et al.;TCOs for Poly-Si Based Passivating Contacts ; Wed, April 10; 14:30-14:45 – Session 10
A. Čampa et al.; New Characterization Method for Determination of Surface Recombination Rate of Carrier Selective Junctions; Mon, April 08; 13:00-14:00 – Poster Session 1: S1-03
J.J Diaz Leon et al.; Integration Avenues in Solar Cells Implementing Passivating Contacts; Mon, April 8; 16:00-17:00 – Poster Session 2: S2-09
A. Veau et al.; Ex Situ Phosphorus Doped Polysilicon Films by Plasma Immersion Ion Implantation (PIII): Controlling and Simplifying Passivated Contacts Integration; Mon, April 8; 16:00-17:00 – Poster Session 2: S2-33, 10.1063/1.5123848
EU PVSEC 2018 (Sep 24-28 2018)
B. Min et al.; Status of the EU H2020 DISC project: European collaboration in research and development of high efficient Double side contacted cells with Innovative carrier-Selective Contacts (2BP.1.4, Tue, 25th, 10:30 - 12:10), 10.4229/35thEUPVSEC20182018-2BP.1.4
C. Ballif et al.; From Wafers to Modules to Mass Production: Solving All Bottlenecks in Silicon Heterojunction Technology (2AV.3.22, Mon, 24th, 17:00 - 18:30), 10.5281/zenodo.1744857
E. Bruhat et al.; Optimizing TCO Layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells Integrating Passivated Contacts (2AV.2.38, Mon, 24th, 15:15 - 16:45), 10.4229/35thEUPVSEC20182018-2AV.2.38
F.-J. Haug et al.; SiCx- and SiOx-based passivating contacts for high-efficiency silicon solar cells (2CO.11.2, Wed, 26th, 15:15 - 16:45)
J. Stückelberger et al.; Transparent Passivating Contacts for Front Side Application (2CO.11.6, Wed, 26th, 15:15 - 16:45)
A. Lachowicz et al.; Processing Routes and Costs for Copper Plating on Bifacial Heterojunction Cells (2CO.12.5, Wed, 26th, 17:00 - 18:30)
M. Despeisse, B. et al.; Special Introductory Presentation: Engineering of Thin Film Silicon Materials for High Efficiency Crystalline Silicon Solar Cells (2DO.1.1, Thu, 27th, 13:30 - 15:00)
J.J. Diaz Leon et al.; Transparent conductive oxide screening on high temperature passivating contact solar cells for improved passivation and cell efficiency (2DO.2.1, Thu, 27th, 15:15 - 16:45)
L. Ding et al.; High mobility IWO for improved current in heterojunction technology solar cells (2DO.2.5, Thu, 27th, 15:15 - 16:45)
WCPEC-7 (Jun 10-15 2018)
F. Feldmann et al.; A Study on the Charge Carrier Transport of Passivating Contacts; 1058
R. Peibst et al.; p+/n+ polysilicon-on-oxide tunneling junctions as an interface of p-type PERC cells for tandem applications; 799;
10.1109/PVSC.2018.8548032
A. Ingenito et al.; A passivating contact concept compatible with a short thermal treatment; 465;
10.1109/PVSC.2018.8547626
G. Nogay et al.; A Simple Process Flow For Silicon Solar Cells With Co-Annealing Of Electron And Hole Selective Passivating Contacts; 461; Best studend paper award
ETIP PV - Quality and sustainability of PV systems conference (May 3 2018)
M. Topič et al.; High Efficiency Matters – The DISC Project
2018 MRS Spring Meeting & Exhibit (Apr 2-6 2018)
A. Whiting and B. Hartlin; Assessing the Life Cycle Impacts of a Novel Renewable Energy Technology; EN16.03.02
SiliconPV 2018 (Mar 19-21 2018)
B. Min and K. Ding; EU Project Special Presentation: Rules and targets of "Sister projects"
T. Hatt et al.; Novel Mask-less Plating Metallization Route for Bifacial Silicon Heterjunction Solar Cells;
10.1063/1.5049272
B. Min et al.; Increasing the Photo-generated Current in Solar Cells with Passivating Contacts by Reducing the Poly-Si Deposition Temperature;
10.1063/1.5049278
T. Wietler et al.; Formation of a resistive SiOx layer at the interface of poly-Si to aluminium-doped zinc oxide
J.-I. Polzin et al.; Realization of TOPCon using industrial scale PECVD equipment;
10.1063/1.5049281
N. Folchert et al.; Temperature-Dependent Contact Resistance Measurements on Carrier-Selective Poly-Si on Oxide Junctions
G. Nogay et al.; Silicon rich silicon carbide as poly-Si passivating contacts for Silicon solar cells
J. Stückelberger et al.; Influence of ITO Sputter Deposition on Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts
C. Messmer et al.; Efficient Hole Extraction for Metal Oxide Based Silicon Heterojunction Solar Cells: A Simulation Study;
10.1063/1.5049276
L. Tutsch et al.; Integrating transparent conductive oxides to improve the infrared response of silicon solar cells with passivating rear contacts;
10.1063/1.5049286
E. Bruhat et al.; Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers;
10.1063/1.5049267
PVSEC-27 (Nov 12-17 2017)
Christophe Allebé, Antoine Descoeudres, Jorg Horzel, Andrea Ingenito, Gizem Nogay, Philippe Wyss, Josua Stuckelberger, Franz-Josef Haug, Matthieu Despeisse, Christophe Ballif;
PECVD Layers for High and Low Temperature Improved Industrial Solar Cell Processes;
Abstract
A. Ingenito, G. Nogay, P. Wyss, J. Stuckelberger, I. Mack, Q. Jeangros, C. Allebé, J. Horzel, M. Despeisse, P. Löper, F.-J. Haug, C. Ballif;
Metallization of Silicon Carbide- and Silicon Oxide-Based Layer Stacks as Passivating Contacts for Silicon Solar Cells;
Presentation
Agata Lachowicz, Jonas Geissbühler, Antonin Faes, Jonathan Champliaud, Joost Hermans, Jean-Francois Lerat, Pierre-Jean Ribeyron, Charles Roux, Guillaume Wahli, Pierre Pape, Benjamin Strahm, Jörg Horzel, Christophe Ballif and Matthieu Despeisse;
Reliable Copper Plating Process for Bifiacial Heterojunction Cells;
Presentation
A. Faes, B. Paviet-Salomon, A. Tomasi, D. Lachenal, N. Badel, G. Christmann, L.Barraud, A. Descœudres, J. Geissbühler, A. Lachowicz, J. Champliaud, L. Curvat, J. Levrat, Q. Jeangros, S. Nicolay, P. Papet, B. Strahm, Y. Yao, T. Söderström, S.De Wolf, M. Despeisse, and C. Ballif;
Multi-Wire Interconnection of Back-Contacted Silicon Heterojunction Solar Cells;
Presentation
M. Zwegers, J. Bertens, G. van de Ven;
High volume manufacturing plating equipment for metallization of high efficiency silicon solar cells;
Poster
EU PVSEC 2017 (Sep 25-29 2017)
J. Stuckelberger, P. Wyss, I. Mack, G. Nogay, A. Ingenito, Q. Jeangros, F.-J. Haug, P. Löper & C. Ballif;
Mixed-Phase Silicon Oxide Layers with Phosphorus and Boron Doping for CoAnnealed Transparent Passivating Front and Rear Contacts;
2AV.3.4
G. Nogay, J. Stuckelberger, P. Wyss, Q. Jeangros, F.-J. Haug, P. Löper & C. Ballif, M. Hyvl, M. Ledinsky & A. Fejfar, C. Allebé & M. Despeisse;
Locally Conductive Transport Channel Formation in High Temperature Stable Hole-Selective Silicon-Rich Silicon Carbide Passivating Contact ;
2BO.4.3
A. Ingenito, G. Nogay, J.A. Stuckelberger, P. Wyss, F.-J. Haug, P. Löper & C. Ballif;
Wide-Band Gap Silicon Carbide for Front Side Carrier Selective Contacts;
2BO.4.1
A. Lachowicz, J. Geissbühler, A. Faes, J. Horzel, M. Despeisse & C. Ballif;
Copper Plating Chemistry for Solar Cells;
2AV.3.22, 10.4229/EUPVSEC20172017-2AV.3.22
M. Bivour, C. Messmer, L. Neusel, F. Zähringer, T. Matsui, J. Schön, M. Hermle, S.W. Glunz;
Principles of Carrier-Selective Contacts Based on Induced Junctions;
2BO.4.2, 10.4229/EUPVSEC20172017-2BO.4.2
L. Tutsch, M. Bivour, M. Hermle & J. Rentsch;
Influence of the Transparent Electrode Sputtering Process on the Interface Passivation Quality of Silicon Heterojunction Solar Cells;
2AV.3.8, 10.4229/EUPVSEC20172017-2AV.3.8
IEEE PVSC 2017 (Jun 25-30 2017)
Stephanie Essig, Julie Dréon, Jérémie Werner, Philipp Löper, Stefaan De Wolf,Mathieu Boccard, Christophe Ballif;
MoOx and WOx based hole-selective contacts for wafer-based Si solar cells;
@zenodo
SiliconPV 2017 (Apr 3-5 2017)
Elise Bruhat, Thibaut Desrues, Bernadette Grange, Helène Lignier, Danièle Blanc-Pélissier, Sébastien Dubois;
TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties;
10.1016/j.egypro.2017.09.354
Lisa Neusel, Martin Bivour, Martin Hermle;
Selectivity issues of MoOx based hole contacts;
10.1016/j.egypro.2017.09.268
Takuya Matsui, Martin Bivour, Paul Ndione, Paul Hettich, Martin Hermle;
Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon;
10.1016/j.egypro.2017.09.093