Oct 12 2017

DISC Newsletter #1

The first newsletter of the DISC project is available for download after one year of the project.

Oct 2 2017


The DISC project was present at the 33rd European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2017. Consortium members took this opportunity to discuss recent project progress, collaborate with sister projects and also activelly participated in the conference with 6 contributions:

  • J. Stuckelberger et al.; Mixed-Phase Silicon Oxide Layers with Phosphorus and Boron Doping for CoAnnealed Transparent Passivating Front and Rear Contacts
  • G. Nogay et al.; Locally Conductive Transport Channel Formation in High Temperature Stable Hole-Selective Silicon-Rich Silicon Carbide Passivating Contact
  • A. Ingenito et al.; Wide-Band Gap Silicon Carbide for Front Side Carrier Selective Contacts
  • A. Lachowicz et al.; Copper Plating Chemistry for Solar Cells
  • M. Bivour et al.; Principles of Carrier-Selective Contacts Based on Induced Junctions
  • L. Tutsch et al.; Sputter Deposition Induced Damage to a-Si:H / c-Si Passivation Quality

The detailed list is available under publications.

Sep 1 2017

M12 project meeting

STC meeting after 12 months since the project’s start took place at ISFH in Hameln on Aug 30-31 2017. The project is in full swing in and is focused to reach the anticipated goals. Recent progress resulted in several highlights. Initial results were already presented at the SiliconPV 2017 conference with three scientific contributions.


Apr 7 2017

DISC @ Silicon PV 2017

DISC consortium members gathered at the 7th International Conference on Crystalline Silicon Photovoltaics 2017, Silicon PV 2017.

After only 6 months in the project, the first results were already presented:

  • E. Bruhat et al.; TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties
  • L. Neusel et al.; Selectivity issues of MoOx based hole contacts
  • T. Matsui et al.; Investigation of atomic-layer-deposited TiOx as selective electron and hole contacts to crystalline silicon

The detailed list is available under publications.

Apr 3 2017

M6 project meeting

An official project meeting after 6 months of the project was held in Lyon, France. The event was attended by over 25 representatives of all 13 consortium partners. Recent project developments were discussed. Work package leaders presented the work done within the work packages. All work packages were reported to be on track with already encouraging preliminary results.